Researchers from the University of Nebraska–Lincoln have achieved a groundbreaking advancement in antiferromagnetic spintronics, a development that could significantly expand the capabilities of this revolutionary nanotechnology, which has been limited by its high power consumption.
The Holy Grail Unveiled
The team had found that by using an approach called “B-doping” (introducing boron into magnetoelectric oxides), they are able to faithfully manipulate magnetic fields in the high temperatures necessary for modern electronics. As Christian Binek, Charles Bessey Professor of physics, elaborates: This is the holy grail of this kind of research.
In the last 30 years, several important achievements in spintronics — an innovative technology for further miniaturisation of the next generation of electronic devices on a nanometer scale. However, a key hurdle to overcome in order for these devices to truly realize their potential is the absence of any quantum material that breaks its magnetic states under electronic control at above-room temperature. Although still in its experimental stages, the material being studied by the Nebraska team — chromium oxide with a sprinkling of boron scattered across it — could help to lead the charge for digital memory and processors that use much less energy while perhaps operating at even faster speeds than today.
The Breakthrough in Action
Antiferromagnetic substances such as chromium oxide have all of the same atoms with poles pointing in one direction contrasting those with poles pointing in the opposite, and hence pretty much canceling each other out to produce near-zero magnetic field. Chromium oxide was able to achieve voltage control of the antiferromagnetic order before, however this was only possible under some conditions, which include working at relatively low temperatures and needing a symmetry-breaking applied magnetic field.
Well, no longer thanks to boron-doping. Abdelghani Laraoui, assistant professor of mechanical and materials engineering, has developed a way to examine the boron-doping method that should work in this unconventional fashion — nitrogen vacancy scanning probe microscopy (NV microscopy). This unique approach enables researchers to visualize the interfacial magnetization and the doping effects of B, which is also shown in their former collaborative study with Binek from 2022 published in RSC Advances.
This is happening by providing experimental research with a previously unseen laboratory technique that confirms the effects on which until now scientists could only speculate, as Binek, scientific director of the Emergent Quantum Materials and Technologies collaboration (EQUATE), says. Laraoui leads the theoretical part of the EQUATE associate team on quantum technologies.
Conclusion
Leveraging this discovery, Cornelius confirmed earlier theoretical work by the team suggesting that a cadmium manganese telluride alloy could maintain an incredibly rare property of spin: perfect and long-lasting orientation. The researchers’ successful solution to the long-standing challenges in antiferromagnetic spintronics opens a new door for digital memory, processors, and other advanced electronics that could have profound impact on our everyday lives as well as where technology is headed next.
